IRGPH40M short circuit rated fast igbt insulated gate bipolar transistor parameter min. typ. max. units r q jc junction-to-case ------ ------ 0.77 r q cs case-to-sink, flat, greased surface ------ 0.24 ------ c/w r q ja junction-to-ambient, typical socket mount ------ ------ 40 wt weight ------ 6 (0.21) ------ g (oz) features ? short circuit rated - 10s @ 125c, v ge = 15v ? switching-loss rating includes all "tail" losses ? optimized for medium operating frequency (1 to 10khz) v ces = 1200v v ce(sat) 3.4v @v ge = 15v, i c = 18a e c g n-channel absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current 31 i c @ t c = 100c continuous collector current 18 a i cm pulsed collector current ? 62 i lm clamped inductive load current ? 62 t sc short circuit withstand time 10 s v ge gate-to-emitter voltage 20 v e arv reverse voltage avalanche energy ? 15 mj p d @ t c = 25c maximum power dissipation 160 w p d @ t c = 100c maximum power dissipation 65 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1n?m) t o-247ac preliminary data sheet pd - 9.1029a 8/4/97 thermal resistance insulated gate bipolar transistors (igbts) from international rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power mosfet. they provide substantial benefits to a host of high-voltage, high- current applications. these new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. description
IRGPH40M notes: ? v cc =80%(v ces ), v ge =20v, l=10h, r g = 10 w ? repetitive rating; v ge =20v, pulse width limited by max. junction temperature. ? repetitive rating; pulse width limited by maximum junction temperature. ? pulse width 80s; duty factor 0.1%. ? pulse width 5.0s, single shot. switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions q g total gate charge (turn-on) ---- 50 75 i c = 18a q ge gate - emitter charge (turn-on) ---- 11 21 nc v cc = 400v q gc gate - collector charge (turn-on) ---- 15 30 v ge = 15v t d(on) turn-on delay time ---- 30 ---- t j = 25c t r rise time ---- 21 ---- ns i c = 18a, v cc = 960v t d(off) turn-off delay time ---- 400 890 v ge = 15v, r g = 10 w t f fall time ---- 390 740 energy losses include "tail" e on turn-on switching loss ---- 1.1 ---- e off turn-off switching loss ---- 4.0 ---- mj e ts total switching loss ---- 5.1 8.0 t sc short circuit withstand time 10 ---- ---- s v cc = 720v, t j = 125c v ge = 15v, r g = 10 w , v cpk < 1000v t d(on) turn-on delay time ---- 28 ---- t j = 150c, t r rise time ---- 24 ---- ns i c = 18a, v cc = 960v t d(off) turn-off delay time ---- 600 ---- v ge = 15v, r g = 10 w t f fall time ---- 870 ---- energy losses include "tail" e ts total switching loss ---- 9.0 ---- mj l e internal emitter inductance ---- 13 ---- nh measured 5mm from package c ies input capacitance ---- 1360 ---- v ge = 0v c oes output capacitance ---- 100 ---- pf v cc = 30v c res reverse transfer capacitance ---- 15 ---- ? = 1.0mhz parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 ---- ---- v v ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage ? 20 ---- ---- v v ge = 0v, i c = 1.0a d v (br)ces / d t j temperature coeff. of breakdown voltage ---- 1.1 ---- v/c v ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage ---- 2.3 3.4 i c = 18a ---- 3.0 ---- v i c = 31a v ge = 15v ---- 2.8 ---- i c = 18a, t j = 150c v ge(th) gate threshold voltage 3.0 ---- 5.5 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage ---- -14 ---- mv/c v ce = v ge , i c = 250a g fe forward transconductance ? 4.0 10 ---- s v ce = 100v, i c = 18a i ces zero gate voltage collector current ---- ---- 250 a v ge = 0v, v ce = 1200v ---- ---- 3500 v ge = 0v, v ce = 1200v, t j = 150c i ges gate-to-emitter leakage current ---- ---- 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified)
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